TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

文件：253.49 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

恩XP

TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

文件：208.49 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

StarMOST Power MOSFET

文件：201.55 Kbytes 页数：2 Pages

GOOD-ARK

固锝电子

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING

文件：172.35 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体