TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM

TMOS E-FET Power Field Effect Transistors DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

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MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

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ISC

无锡固电

Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK

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ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V DESCRIPTION ·motor drive, ·DC-DC converter, ·power switch and solenoid drive.

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ISC

无锡固电

丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

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TECHPUBLIC

台舟电子

Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK

文件：90.4 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK

文件：90.4 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK

文件：90.4 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

功率 MOSFET，200V，6A，700mΩ，单 N 沟道，DPAK

此高级功率 MOSFET 适用于承受雪崩和换相模式下的高能量。新型能效设计还提供了具有快速恢复时间的漏极-源极二极管。此类器件专用于电源、转换器和 PWM 电机控制中的低电压、高速开关应用，尤其适用于二极管速度和换相安全运行区域非常关键的桥式电路，可针对非预期的瞬变电压提供附加安全裕度。 • Avalanche Energy Specified\n• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Diode is Characterized for Use in Bridge Circuits\n• IDSS and VDS(on) Specified at Elevated Temperature\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM

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