丝印：TPM2006NHK3；Package：TO-252-3L；N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

文件：1.00039 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK

文件：90.4 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V DESCRIPTION ·motor drive, ·DC-DC converter, ·power switch and solenoid drive.

文件：324.44 Kbytes 页数：3 Pages

ISC

无锡固电

Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK

文件：90.4 Kbytes 页数：9 Pages

ONSEMI

安森美半导体