TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low v

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MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM

恩XP

StarMOST Power MOSFET

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GOOD-ARK

固锝电子

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING

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STMICROELECTRONICS

意法半导体

3A, 250V N-CHANNEL POWER MOSFET

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UTC

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