TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM

HDTMOS E-FET Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recover

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MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220

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ONSEMI

安森美半导体

Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220

文件：91.41 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, • Avalanche Energy Specified\n• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Diode is Characterized for Use in Bridge Circuits\n• IDSS and VDS(on) Specified at Elevated Temperature\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220

ONSEMI

安森美半导体