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MTP50P03HDL中文资料摩托罗拉数据手册PDF规格书
MTP50P03HDL规格书详情
HDTMOS E-FET Power Field Effect Transistor
P–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
产品属性
- 型号：
MTP50P03HDL
- 功能描述：
MOSFET 30V 50A P-Channel
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
NA |
13650 |
原装正品,假一罚百! |
询价 | ||
VBSEMI/微碧半导体 |
24+ |
TO220 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | ||
MTP50P03HDL |
6 |
6 |
询价 | ||||
ON |
23+ |
TO-220 |
4 |
正规渠道,只有原装! |
询价 | ||
ON |
24+ |
TO-220 |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
询价 | ||
ON |
23+ |
TO220AB |
5000 |
原装正品,假一罚十 |
询价 | ||
24+ |
8866 |
询价 | |||||
ON/安森美 |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ON |
24+ |
TO220AB |
21935 |
询价 |
