MTP3N25E中文资料摩托罗拉数据手册PDF规格书
MTP3N25E规格书详情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
产品属性
- 型号：
MTP3N25E
- 制造商：
MOTOROLA
- 制造商全称：
Motorola, Inc
- 功能描述：
TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
37850 |
23+ |
10 |
15471 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ON |
24+ |
N/A |
3520 |
询价 | |||
ON |
23+ |
TO-220 |
230 |
正规渠道,只有原装! |
询价 | ||
F |
22+ |
TO-220AB |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
MOT |
05+ |
TO-220 |
3000 |
原装进口 |
询价 | ||
ON |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON |
23+ |
TO-220 |
6893 |
询价 | |||
ON |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
ON/安森美 |
22+ |
TO-220 |
88897 |
询价 | |||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
