MTP3N120E中文资料PDF规格书
MTP3N120E规格书详情
TMOS E-FET Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
This advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls, and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
* See App. Note AN1327 — Very Wide Input Voltage Range;
Off–line Flyback Switching Power Supply
产品属性
- 型号:
MTP3N120E
- 制造商:
MOTOROLA
- 制造商全称:
Motorola, Inc
- 功能描述:
TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ON |
20+ |
TO-220 |
90000 |
原装正品现货/价格优势 |
询价 | ||
ON/安森美 |
TO-220 |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ON |
2024+ |
TO-220 |
32560 |
原装优势绝对有货 |
询价 | ||
ON |
2315+ |
TO-220 |
6686 |
优势代理渠道,原装现货,可全系列订货 |
询价 | ||
ON |
1746+ |
TO220 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
ON |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ON(安森美) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | ||
5000 |
公司存货 |
询价 | |||||
ON(安森美) |
23+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 |