TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time.

文件：252.45 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：300.9 Kbytes 页数：2 Pages

ISC

无锡固电

TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

TMOS E-FET Power Field Effect Transistor\nN–Channel Enhancement–Mode Silicon GateThis advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed

恩XP

NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS

文件：148.75 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1200V N-Channel MOSFET

Application « Adaptor | » Charger « Power management « SMPS Standby Power

文件：2.91996 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

THINKISEMI 1000V/1200V/1500V N-Channel Power MOSFETs

文件：697.32 Kbytes 页数：1 Pages

THINKISEMI

思祁半导体