1200V N-Channel MOSFET

Application « Adaptor | » Charger « Power management « SMPS Standby Power

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TECHPUBLIC

台舟电子

NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

3.0A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Ca

文件：287.17 Kbytes 页数：7 Pages

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3.0A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Ca

文件：287.17 Kbytes 页数：7 Pages

UTC

友顺

3.0A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Ca

文件：287.17 Kbytes 页数：7 Pages

UTC

友顺

3.0A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Ca

文件：287.17 Kbytes 页数：7 Pages

UTC

友顺

3.0A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Ca

文件：287.17 Kbytes 页数：7 Pages

UTC

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丝印：3N12030；Package：PG-HDSOP-16；MOSFET OptiMOSTM3 Power-Transistor, 120 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • 100 avalanche tested • Optimized for motor drives and battery powered applications. • Optimized for top side cooling. • Ideal for battery management switch application • Su

文件：1.61972 Mbytes 页数：13 Pages

INFINEON

英飞凌

Planar Power MOSFET  (N-CH)

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