250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：667.25 Kbytes 页数：9 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.4A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.32 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel Power MOSFET

文件：870.42 Kbytes 页数：10 Pages

HMSEMI

华之美半导体

POWER MOSFET

文件：506.92 Kbytes 页数：3 Pages

SUNTAC

N-CHANNEL MOSFET

文件：3.19176 Mbytes 页数：12 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

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