P-CHANNEL 30V - 0.025ohm - 24A DPAK/IPAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance and low gate charge. ■ TYPICAL RDS(on) = 0.025Ω ■ STANDARD OUTLINE FOR EASY

文件：320.04 Kbytes 页数：8 Pages

STMICROELECTRONICS

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P-channel 30 V - 0.025 廓 - 24 A - DPAK / IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance and low gate charge. Features ■ Standard outline for easy automated surface

文件：339.04 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

P-CHANNEL 30V - 0.025ohm - 24A DPAK/IPAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance and low gate charge. ■ TYPICAL RDS(on) = 0.025Ω ■ STANDARD OUTLINE FOR EASY

文件：320.04 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

P-channel 30 V - 0.025 廓 - 24 A - DPAK / IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance and low gate charge. Features ■ Standard outline for easy automated surface

文件：339.04 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

P-Channel 30-V (D-S) MOSFET

文件：1.73373 Mbytes 页数：8 Pages

VBSEMI

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P-Channel 30-V (D-S) MOSFET

文件：1.02413 Mbytes 页数：9 Pages

VBSEMI

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P-CHANNEL 30V - 0.025 Ohm - 24A STripFET™ II POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance and low gate charge. Standard outline for easy automated surface mount assembly\nLow gate charge\nLow threshold device;

ST

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