isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.75Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：350.2 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET

文件：409.25 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：B10NK60Z；Package：DPAK；N-channel 600V - 0.65廓 - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH??Power MOSFET

文件：492.83 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10795 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-channel 600 V, 0.65 Ohm typ., 10 A SuperMESH Power MOSFET in a D2PAK package

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/d • 100% avalanche tested \n• Extremely high dv/dt capability \n• Gate charge minimized \n• Zener-protected;

ST

意法半导体