首页 >STB13N60M2>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
STB13N60M2 | Extremely low gate charge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh™M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | |
Extremelylowgatecharge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh™M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Extremelylowgatecharge | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel600V,0.35typ.,11AMDmeshTMM2PowerMOSFETinaTO-220FPultranarrowleadspackage Features Extremelylowgatecharge LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh™M2technology. Thankstoitsstriplayoutandanimproved | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Lowgateinputresistance Description ThisdeviceisanN-channelPowerMOSFETdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.Itis | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel600V,0.35廓typ.,11AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220,IPAKandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel600V,0.35廓typ.,11AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220,IPAKandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
详细参数
- 型号：
STB13N60M2
- 制造商：
STMicroelectronics
- 功能描述：
POWER MOSFET - Tape and Reel
- 功能描述：
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R
- 功能描述：
MOSFET N-CH 600V 11A D2PAK
- 功能描述：
STB13N60M2 Series N-Channel 650 V 0.38 Ohm MDmesh II Plus Power Mosfet - D2PAK
- 功能描述：
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
15+ |
TO263 |
4000 |
原厂原装,本地现货库存,假一罚十! |
询价 | ||
ST |
23+ |
TO263 |
6996 |
只做原装正品现货 |
询价 | ||
ST(意法半导体) |
24+ |
TO-263-2 |
10000 |
只做原装现货 假一赔万 |
询价 | ||
ST |
24+ |
TO263 |
2000 |
原装原厂代理 可免费送样品 |
询价 | ||
ST/意法半导体 |
22+ |
TO-263-3 |
6000 |
原装正品现货 可开增值税发票 |
询价 | ||
ST |
23+ |
TO263 |
35680 |
只做进口原装QQ:373621633 |
询价 | ||
ST(意法半导体) |
24+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
ST原装 |
25+23+ |
TO-263 |
23948 |
绝对原装正品全新进口深圳现货 |
询价 |
相关规格书
更多- STB13N80K5
- STB13NM60N
- STB140NF75T4
- STB14NK60ZT4
- STB14NM65N
- STB150NF04
- STB155N3H6
- STB15N65M5
- STB15NM60ND
- STB160N75F3
- STB16NF06LT4
- STB180N55F3
- STB18N60M2
- STB18NF25
- STB18NM60N
- STB18NM80
- STB19NM65N
- STB200NF03T4
- STB20N65M5
- STB20NM50-1
- STB20NM50T4
- STB20NM60T4
- STB21N90K5
- STB21NM50N-1
- STB22NM60N
- STB23NM60ND
- STB24N60DM2/BKN
- STB24N65M2
- STB24NM65N
- STB25NM50N-1
- STB26NM60N
- STB270N4F3
- STB28N65M2
- STB28NM60ND
- STB300NH02L
- STB30NF10T4
- STB30NF20L
- STB30NM60N
- STB32N65M5
- STB33N60M2
- STB34N65M5
- STB34NM60ND
- STB35NF10T4
- STB36NM60N
- STB36NM60ND-CUTTAPE
相关库存
更多- STB13NK60ZT4
- STB140NF55T4
- STB14NK50ZT4
- STB14NM50N
- STB150N3LH6
- STB150NF55T4
- STB155N3LH6
- STB15N80K5
- STB15NM65N
- STB16N65M5
- STB170NF04
- STB18N55M5
- STB18N65M5
- STB18NF30
- STB18NM60ND
- STB19NF20
- STB200N6F3
- STB200NF04T4
- STB20N95K5
- STB20NM50FDT4
- STB20NM60D
- STB21N65M5
- STB21NK50Z
- STB21NM60ND
- STB23NM50N
- STB24N60DM2
- STB24N60M2
- STB24NM60N
- STB25N80K5
- STB25NM60ND
- STB26NM60ND
- STB28N60M2
- STB28NM50N
- STB2N62K3
- STB30N65M5
- STB30NF20
- STB30NM50N
- STB31N65M5
- STB32NM50N
- STB33N65M2
- STB34NM60N
- STB35N65M5
- STB36NF03LT4
- STB36NM60ND
- STB38N65M5
