丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：313.88 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 500 V, 0.162 廓, 17 A TO-220, TO-220FP, TO-247, D짼PAK MDmesh??II Power MOSFET

文件：867.83 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N沟道500 V、0.162 Ohm、17 A MDmesh(TM) II功率MOSFET，D2PAK封装

These devices are made using the second generation of MDmesh™technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

N-channel 500 V, 0.162 廓, 17 A TO-220, TO-220FP, TO-247, D짼PAK MDmesh??II Power MOSFET

文件：867.83 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：312.83 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 500 V, 0.170 typ., 14 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package

文件：659.41 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体