丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：313.85 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V - 0.13 廓 - 21 A FDmesh??II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247

文件：530.36 Kbytes 页数：18 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.13 廓, 21 A FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

文件：600.6 Kbytes 页数：18 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal f The worldwide best R\nDS(on)*area amongst the fast recovery diode devices\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nExtremely high dv/dt and avalanche capabilities;

ST

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