STB40N60M2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.088Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STB40N60M2

N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

STB40N60M2

N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

STF40N60M2

N-channel600V,0.078typ.,34AMDmeshIIPluslowQgPowerMOSFETsinD2PAK,TO-220andTO-247packages

STF40N60M2

N-channel600V,0.078Ωtyp.,34AMDmeshM2PowerMOSFETsinTO-220FP,I2PAKFPandTO-3PFpackages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(Coss)profile •100avalanchetested •Zener-protected Applications •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh™M2tec

STFH40N60M2

N-channel600V,0.078typ.,34AMDmeshTMM2PowerMOSFETinaTO-220FPwidecreepagepackage

Features Extremelylowgatecharge Excellentoutputcapacitance(COSS)profile 100avalanchetested Zener-protected Widecreepagedistanceof4.25mmbetweenthepins Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh™M2technology.Thankstoitsstrip

STFI40N60M2

N-channel600V,0.078typ.,34AMDmeshIIPluslowQgPowerMOSFETsinD2PAK,TO-220andTO-247packages

STFI40N60M2

N-channel600V,0.078Ωtyp.,34AMDmeshM2PowerMOSFETsinTO-220FP,I2PAKFPandTO-3PFpackages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(Coss)profile •100avalanchetested •Zener-protected Applications •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh™M2tec

STFW40N60M2

N-channel600V,0.078Ωtyp.,34AMDmeshM2PowerMOSFETsinTO-220FP,I2PAKFPandTO-3PFpackages

Features •Extremelylowgatecharge •Excellentoutputcapacitance(Coss)profile •100avalanchetested •Zener-protected Applications •Switchingapplications •LLCconverters,resonantconverters Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh™M2tec

STP40N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.088Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.