N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 13A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= 10V APPLICATIONS · Switching · LLC converters, resonant converters

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ISC

无锡固电

Automotive-grade N-channel 330 V, 160 m typ., 18 A STripFET II Power MOSFET in a DPAK package

文件：1.00331 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

汽车级N沟道330 V、160 mOhm典型值、18 A STripFET(TM) II功率MOSFET，D2PAK封装

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • Designed for automotive applications and AEC-Q101 qualified \n• 100% avalanche tested \n• 175 °C junction temperature;

ST

意法半导体

ST
TO263

ST

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ST
TO-263

ST

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