N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages

Description These devices are N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitabl

文件：1.31186 Mbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.03991 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：314.17 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道500 V、0.28 Ohm典型值、12 A MDmesh II功率MOSFET，D2PAK封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体