N沟道100 V、9 mOhm典型值、110 A STripFET II功率MOSFET，D2PAK封装

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and c • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

意法半导体

N-channel 100 V, 0.009 廓, 110 A STripFET??II Power MOSFET in TO-247, TO-220, D짼PAK, TO-220FP

文件：946.25 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

ST
TO-263

ST

上传：深圳市赛科盈电子有限公司

ST
TO263

ST

上传：深圳市粤骏腾电子科技有限公司

ST
TO-263

ST

上传：深圳市励创源科技有限公司