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STB120NF10T4中文资料N沟道100 V、9 mOhm典型值、110 A STripFET II功率MOSFET,D2PAK封装数据手册ST规格书
STB120NF10T4规格书详情
描述 Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
特性 Features
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
技术参数
- 制造商编号
:STB120NF10T4
- 生产厂家
:ST
- Package
:D2PAK
- Grade
:Industrial
- VDSS(V)
:100
- RDS(on)_max(@ VGS=10V)(Ω)
:0.0105
- Drain Current (Dc)_max(A)
:110
- PTOT_max(W)
:312
- Qg_typ(nC)
:172
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST/意法半导体 |
21+ |
D2PAK-3 |
8080 |
只做原装,质量保证 |
询价 | ||
ST |
17+ |
TO-263 |
63 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
24+ |
TO-263 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
ST |
24+ |
TO-263 |
8000 |
原装,正品 |
询价 | ||
ST/意法 |
23+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
询价 | ||
ST/意法 |
22+ |
TO-263 |
18500 |
原装正品支持实单 |
询价 | ||
ST |
23+ |
TO-263 |
66600 |
专业芯片配单原装正品假一罚十 |
询价 | ||
ST/意法 |
24+ |
84000 |
只做原装进口现货 |
询价 | |||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 |