N-channel 600 V, 0.48 廓, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. F

文件：497.6 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.55Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：350.02 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. F

文件：657.51 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V-0.48廓-13A-TO-220/FP-D짼/I짼PAK-TO-247 Zener-Protected SuperMESH??MOSFET

文件：369.51 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.48, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH Power MOSFET

文件：495.05 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.04002 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N沟道600 V、0.48 Ohm典型值、13 A SuperMESH功率MOSFET，D2PAK封装

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. • Gate charge minimized \n• Very good manufacturing repeatability \n• Very low intrinsic capacitances;

ST

意法半导体