N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：584.86 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET

文件：394.68 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 40 V, 0.0043 Ohm typ., 120 A StripFET II Power MOSFET in D2PAK package

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and c AEC-Q101 qualified\nExceptional dv/dt capability\n100% avalanche tested\nLow gate charge;

ST

意法半导体

N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：584.86 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 40V - 0.0036 W - 100A D2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：338.42 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

AEC-Q101 qualified

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema

文件：1.12529 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-Channel 40 V (D-S) MOSFET

FEATURES • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see

文件：1.044109 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET

文件：394.68 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel 40 V (D-S) MOSFET

文件：1.07767 Mbytes 页数：9 Pages

VBSEMI

微碧半导体