isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.295Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：336.56 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 800 V, 0.25 廓, 17 A, MDmes Power MOSFET

文件：1.05411 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、0.25 Ohm、17 A MDmesh(TM) 功率MOSFET，D2PAK封装

These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Ut • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

N-channel 800 V, 0.25 廓, 17 A, MDmes Power MOSFET

文件：1.05411 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.25 廓, 17 A, MDmesh??Power MOSFET in D짼PAK, TO-220FP, TO-220 and TO-247 packages

文件：1.05411 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.295Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：327.16 Kbytes 页数：2 Pages

ISC

无锡固电