isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.23Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：349.18 Kbytes 页数：2 Pages

ISC

无锡固电

Extremely low gate charge

文件：1.18431 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.185 Ohm典型值、16 A MDmesh M2功率MOSFET，D2PAK封装

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：1.18431 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.205 typ., 14 A MDmesh M2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features  Extremely low gate charge  Excellent output capacitance (Coss) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and improved vertical structure, the devices

文件：869.04 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：1.18431 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体