丝印：B20NM60；Package：D2PAK；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple

文件：355.14 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET

Features 1. High dv/dt and avalanche capabilities 2. 100 avalanche tested 3. Low input capacitance and gate charge 4. Low gate input resistance Applications 1. Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple

文件：440.68 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 250 mOhm typ., 20 A MDmesh Power MOSFET in a D2PAK package

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Util • High dv/dt and avalanche capabilities \n• Low input capacitance and gate charge \n• Low gate input resistance \n• 100% avalanche tested;

ST

意法半导体

TO-263

ST

上传：深圳市百纳智芯科技有限公司

TO-263

ST

上传：深圳市得捷芯城科技有限公司