N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.27883 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：316.54 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道650 V、0.085 Ohm、27 A MDmesh M5功率MOSFET，D2PAK封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on)* area \n• Higher VDSSrating \n• Excellent switching performance \n• Easy to drive \n• 100% avalanche tested \n• High dv/dt capability;

ST

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isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching appli

文件：292.31 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.27883 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.085 廓, 27 A, MDmesh??V Power MOSFET in D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.27883 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体