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STB35N65M5中文资料N沟道650 V、0.085 Ohm、27 A MDmesh M5功率MOSFET，D2PAK封装数据手册ST规格书
STB35N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
• Worldwide best RDS(on)* area
• Higher VDSSrating
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
• High dv/dt capability
技术参数
- 制造商编号
：STB35N65M5
- 生产厂家
：ST
- Package
：D2PAK
- Grade
：Industrial
- VDSS(V)
：650
- RDS(on)_max(@ VGS=10V)(Ω)
：0.098
- Drain Current (Dc)_max(A)
：27
- PTOT_max(W)
：160
- Qg_typ(nC)
：83
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法 |
22+ |
TO-263 |
5800 |
原装正品支持实单 |
询价 | ||
ST(意法) |
24+ |
N/A |
16048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
ST |
25+23+ |
TO-263 |
28918 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法半导体 |
23+ |
TO-263-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法 |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
ST/意法半导体 |
23+ |
TO-263-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法 |
25+ |
TO-263 |
32360 |
ST/意法全新特价STB35N65M5即刻询购立享优惠#长期有货 |
询价 | ||
ST |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 |
