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STB35N65DM2数据手册ST中文资料规格书
STB35N65DM2规格书详情
描述 Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
特性 Features
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
技术参数
- 制造商编号
:STB35N65DM2
- 生产厂家
:ST
- Package
:D2PAK
- Grade
:Industrial
- VDSS(V)
:650
- RDS(on)_max(@ VGS=10V)(Ω)
:0.11
- Drain Current (Dc)_max(A)
:28
- PTOT_max(W)
:210
- Qg_typ(nC)
:54
- Features
:Fast recovery diode
- Reverse Recovery Time_typ(ns)
:120
- Qrr_typ(nC)
:570
- Peak Reverse Current_nom(A)
:10.2
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法半导体 |
2021+ |
TO-247-3 |
7600 |
原装现货,欢迎询价 |
询价 | ||
ST/意法半导体 |
24+ |
TO-247-3 |
16900 |
原装现货,实单价优 |
询价 | ||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
ST/意法半导体 |
2511 |
TO-247-3 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST/意法半导体 |
23+ |
TO-247-3 |
16900 |
公司只做原装,可来电咨询 |
询价 | ||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
ST |
22+ |
TO263 |
10000 |
原装代理分销商 |
询价 | ||
ST/意法半导体 |
25+ |
TO-247-3 |
10000 |
原装公司现货 |
询价 | ||
ST/意法 |
21+ |
原厂COC随货 |
500000 |
原装正品 |
询价 | ||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
只做原装,质量保证 |
询价 |