首页>STB34NM60ND>规格书详情
STB34NM60ND中文资料N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) D2PAK数据手册ST规格书
STB34NM60ND规格书详情
描述 Description
These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low on-resistance that is unrivaled among silicon-based Power MOSFETs, and superior switching performance with intrinsic fast-recovery body diode.
特性 Features
The world’s best R
DS(on)in TO-220 amongst the fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
技术参数
- 型号：
STB34NM60ND
- 功能描述：
MOSFET N-Ch Power Mosfet 600V 0.097 Ohm 29A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TO-263 |
6000 |
全新原装现货、诚信经营! |
询价 | ||
ST/意法 |
2450+ |
TO-263-3(D2PAK) |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
STM |
23+ |
TO-263-3 (D2PAK) |
50000 |
原装正品 支持实单 |
询价 | ||
ST |
25+23+ |
TO220 |
19455 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法 |
22+ |
TO-263 |
9000 |
原装正品,支持实单! |
询价 | ||
ST/意法 |
21+ |
NA |
12820 |
只做原装,质量保证 |
询价 | ||
ST |
23+ |
TO-263 |
15000 |
正规渠道,只有原装! |
询价 | ||
ST(意法半导体) |
24+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ST |
24+ |
TO-263 |
15000 |
市场最低 原装现货 假一罚百 可开原型号 |
询价 | ||
ST |
24+ |
TO-263 |
25836 |
新到现货，只做全新原装正品 |
询价 |
