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STF35N65DM2

N-channel650V,0.093typ.,32AMDmeshTMDM2PowerMOSFETinaTO-220FPpackage

Features Fast-recoverybodydiode Extremelylowgatechargeandinput capacitance Lowon-resistance 100avalanchetested Extremelyhighdv/dtruggedness Zener-protected Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh™DM2fastrecoverydiode seri

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP35N65DM2

N-channel650V,0.093typ.,32AMDmeshTMDM2PowerMOSFETinaTO-220package

Features Fast-recoverybodydiode Extremelylowgatechargeandinput capacitance Lowon-resistance 100avalanchetested Extremelyhighdv/dtruggedness Zener-protected Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh™DM2fastrecoverydiode seri

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STW35N65DM2

N-channel650V,93mtyp.,32AMDmeshDM2PowerMOSFETinaTO-247package

Features •Fast-recoverybodydiode •Extremelylowgatechargeandinputcapacitance •Lowon-resistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM2fastrecovery diodeseries.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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