N沟道650 V、0.094 Ohm典型值、28 A MDmesh DM2功率MOSFET，TO-247封装

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shif • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

ST

意法半导体

N-channel 650 V, 0.093 typ., 32 A MDmeshTM DM2 Power MOSFET in a TO-220FP package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode seri

文件：702.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.093 typ., 32 A MDmeshTM DM2 Power MOSFET in a TO-220 package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode seri

文件：709.68 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

文件：262.29 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体