N-channel 650 V, 0.093 typ., 32 A MDmeshTM DM2 Power MOSFET in a TO-220FP package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode seri

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STMICROELECTRONICS

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N-channel 650 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220FP package

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diodeseries. It offers very low recovery charge (Qrr) and time (trr)combined with low RDS(on), rendering it suitable for the most demanding highefficiency converters and ideal for bridge topologies and ZVS phase-shiftc • Fast-recovery body diode\n• Extremely low gate charge and input capacitance\n• Low on-resistance• 100% avalanche tested\n• Extremely high dv/dt ruggedness\n• Zener-protected;

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N-channel 650 V, 0.093 typ., 32 A MDmeshTM DM2 Power MOSFET in a TO-220 package

Features  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100 avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode seri

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STMICROELECTRONICS

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N-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

文件：262.29 Kbytes 页数：12 Pages

STMICROELECTRONICS

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