STF35N65DM2

N-channel 650 V, 0.093 typ., 32 A MDmeshTM DM2 Power MOSFET in a TO-220FP package

Features Fast-recoverybodydiode Extremelylowgatechargeandinput capacitance Lowon-resistance 100avalanchetested Extremelyhighdv/dtruggedness Zener-protected Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh™DM2fastrecoverydiode seri

STF35N65DM2

N-channel 650 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220FP package; • Fast-recovery body diode\n• Extremely low gate charge and input capacitance\n• Low on-resistance• 100% avalanche tested\n• Extremely high dv/dt ruggedness\n• Zener-protected;

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diodeseries. It offers very low recovery charge (Qrr) and time (trr)combined with low RDS(on), rendering it suitable for the most demanding highefficiency converters and ideal for bridge topologies and ZVS phase-shiftconverters.\n \n

STP35N65DM2

N-channel650V,0.093typ.,32AMDmeshTMDM2PowerMOSFETinaTO-220package

Features Fast-recoverybodydiode Extremelylowgatechargeandinput capacitance Lowon-resistance 100avalanchetested Extremelyhighdv/dtruggedness Zener-protected Description ThishighvoltageN-channelPowerMOSFETis partoftheMDmesh™DM2fastrecoverydiode seri

STW35N65DM2

N-channel650V,93mtyp.,32AMDmeshDM2PowerMOSFETinaTO-247package

Features •Fast-recoverybodydiode •Extremelylowgatechargeandinputcapacitance •Lowon-resistance •100avalanchetested •Extremelyhighdv/dtruggedness •Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM2fastrecovery diodeseries.