丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：313.5 Kbytes 页数：2 Pages

ISC

无锡固电

Low gate input resistance

文件：1.36887 Mbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247

文件：1.16324 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：313.88 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道600 V、0.092 Ohm典型值、31.5 A MDmesh II功率MOSFET，D2PAK封装

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) D2PAK

These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low on-resistance that is unrivaled among silicon-based Power MOSFETs, and superior switching perfor The world’s best R\nDS(on)in TO-220 amongst the fast recovery diode devices\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nExtremely high dv/dt and avalanche capabilities;

ST

意法半导体