isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 525V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：349.13 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件：1.19927 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件：1.18185 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N-channel 525 V, 1.2 廓, 4.4 A SuperMESH3??Power MOSFET D짼PAK, DPAK, TO-220FP, TO-220, IPAK

文件：1.19927 Mbytes 页数：23 Pages

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MOSFET N-CH 525V 4.4A D2PAK

ST

意法半导体