isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 35A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 78mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

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ISC

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N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.68457 Mbytes 页数：20 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET

文件：1.68457 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：400.61 Kbytes 页数：2 Pages

ISC

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N沟道650 V、0.067 Ohm典型值、35 A MDmesh M5功率MOSFET，D2PAK封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on) * area \n• Higher VDSSrating and high dv/dt capability \n• Excellent switching performance \n• 100% avalanche tested;

ST

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