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STB45N65M5中文资料意法半导体数据手册PDF规格书
STB45N65M5规格书详情
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
• Worldwide best RDS(on) * area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
• 100 avalanche tested
Applications
• Switching applications
产品属性
- 型号：
STB45N65M5
- 功能描述：
MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh V MOS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
2447 |
D2PAK |
105000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
STMicroelectronics |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
STM |
25+ |
TO263 |
3637 |
询价 | |||
ST/意法半导体 |
22+ |
TO-263-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法 |
2406+ |
11260 |
诚信经营!进口原装!量大价优! |
询价 | |||
ST |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法半导体 |
24+ |
TO-263-3 |
16960 |
原装正品现货支持实单 |
询价 | ||
STM |
24+ |
TO263 |
11000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
ST(意法) |
24+/25+ |
10000 |
原装正品现货库存价优 |
询价 | |||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 |
