STB45N10L中文资料意法半导体数据手册PDF规格书

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.028 Ω

■ AVALANCHE RUGGED TECHNOLOGY

■ 100 AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100°C

■ LOW INPUT CAPACITANCE

■ LOW GATE CHARGE

■ LOW LEAKAGE CURRENT

■ APPLICATION ORIENTED CHARACTERIZATION

■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX -1)

■ SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX T4)

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLY (SMPS)

■ CONSUMER AND INDUSTRIAL LIGHTING

■ DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY (UPS)