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STB45N65M5数据手册ST中文资料规格书
STB45N65M5规格书详情
描述 Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
特性 Features
• Worldwide best RDS(on) * area
• Higher VDSSrating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested
技术参数
- 制造商编号
：STB45N65M5
- 生产厂家
：ST
- Package
：D2PAK
- Grade
：Industrial
- VDSS(V)
：650
- RDS(on)_max(@ VGS=10V)(Ω)
：0.078
- Drain Current (Dc)_max(A)
：35
- PTOT_max(W)
：210
- Qg_typ(nC)
：82
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST/意法 |
25+ |
TO-263 |
32360 |
ST/意法全新特价STB45N65M5即刻询购立享优惠#长期有货 |
询价 | ||
STM |
24+ |
TO263 |
12000 |
原装正品 假一罚十 可拆样 |
询价 | ||
ST(意法) |
24+/25+ |
10000 |
原装正品现货库存价优 |
询价 | |||
ST/意法半导体 |
23+ |
TO-263-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法 |
24+ |
TO-263-3 |
2000 |
只做原装，欢迎询价，量大价优 |
询价 | ||
ST |
22+ |
NA |
1000 |
原装正品支持实单 |
询价 | ||
ST/意法半导体 |
22+ |
TO-263-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
原装现货,实单价优 |
询价 |
