N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET

Description These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche rugged

文件：949.48 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 30 V, 2.5 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. R\nDS(on)* Q\ngindustry benchmark\nExtremely low on-resistance R\nDS(on)\nHigh avalanche ruggedness;

ST

意法半导体

N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET

Description These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche rugged

文件：949.48 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

TO263

ST

上传：深圳市励创源科技有限公司

TO-263

ST

上传：深圳市百纳智芯科技有限公司