isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.27 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 75V - 3.5m ohm - 120A - TO-220 - TO-247 - D2PAK MDmesh TM low voltage Power MOSFET

文件：361.46 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 75V - 3.5m廓 - 120A - TO-220 - TO-247 - D2PAK STripFET??Power MOSFET

文件：390.82 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N沟道75 V、3.2 mOhm典型值、120 A STripFET F3功率MOSFET，D2PAK封装

This N-channel enhancement mode Power MOSFET is the latest refinement of ST’s STripFET™ process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. • Ultra low on-resistance \n• 100% Avalanche tested;

ST

意法半导体

N-channel 75V - 3.5m廓 - 120A - TO-220 - TO-247 - D2PAK STripFET??Power MOSFET

文件：390.82 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体