汽车级N沟道250 V、0.14 Ohm、17 A低栅极电荷STripFET II功率MOSFET，D2PAK封装

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • AEC-Q101 qualified \n• Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

意法半导体

N-channel 250 V, 0.14 廓, 17 A low gate charge STripFET??II Power MOSFET in D2PAK and DPAK packages

文件：986.34 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 250 V, 0.14 廓, 17 A low gate charge STripFET??II Power MOSFET in D2PAK and DPAK packages

文件：986.34 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

TO263

ST

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TO-263

ST

上传：深圳市百纳智芯科技有限公司