丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

DESCRIPTION • Low Drain-Source On-Resistance FEATURES • Drain Current –ID= 19A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 190mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and r

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ISC

无锡固电

N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件：552.37 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET

This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding hi 100% avalanche tested\nLow gate input resistance\nLow input capacitance and gate charge;

ST

意法半导体

N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件：552.37 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：311 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件：552.37 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体