高压快速切换NPN功率晶体管

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. \n\n It uses a Cellular Emitter structure to enhance switching speeds. • Fully characterized at 125 ˚C \n• Very high switching speed \n• In compliance with the 2002/93/EC European Directive \n• Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range \n• Integrated free-wheeling diode \n• High voltage c;

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意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. General features ■ Improved specification: Lower leakage current, Tighte

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STMICROELECTRONICS

意法半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 8A D2PAK

STMICROELECTRONICS

意法半导体

TO263

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上传：深圳市励创源科技有限公司

TO-263

ST

上传：深圳市百纳智芯科技有限公司