STB13007DT4中文资料高压快速切换NPN功率晶体管数据手册ST规格书

描述 Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure to enhance switching speeds.

特性 Features

• Fully characterized at 125 ˚C
• Very high switching speed
• In compliance with the 2002/93/EC European Directive
• Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
• Integrated free-wheeling diode
• High voltage capability
• Minimum lot-to-lot spread for reliable operation
• Large RBSOA
• Low spread of dynamic parameters

简介

STB13007DT4属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的STB13007DT4晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。