Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：1.16058 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.03996 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：289.83 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：D2PAK；Package：TO-263；isc N-Channel Mosfet Transistor

文件：312.46 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道600 V、0.28 Ohm典型值、11 A MDmesh(TM) II功率MOSFET，D2PAK封装

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体