丝印：D2PAK；Package：TO-263；isc N-Channel Mosfet Transistor

文件：312.46 Kbytes 页数：2 Pages

ISC

无锡固电

Low gate input resistance

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：1.16058 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.28 廓 typ., 11 A MDmesh??II Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：989.75 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：300.57 Kbytes 页数：2 Pages

ISC

无锡固电