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STD13NM60N中文资料PDF规格书
STD13NM60N规格书详情
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
• 100 avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
产品属性
- 型号:
STD13NM60N
- 功能描述:
MOSFET N-Ch 600 Volt 11 Amp Power MDmesh
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
原盒原包装 |
33000 |
全新原装假一赔十 |
询价 | ||
ST |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST/意法半导体 |
21+ |
TO-252-3 |
8800 |
公司只做原装正品 |
询价 | ||
ST |
22 |
TO-252-3 |
25000 |
3月31原装,微信报价 |
询价 | ||
ST |
14+ |
TO-252 |
190 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST/意法 |
22+ |
TO-252-3 |
10000 |
原装现货假一赔十 |
询价 | ||
ST(意法半导体) |
23+ |
TO2522(DPAK) |
6000 |
询价 | |||
STM |
21+ |
N/A |
2500 |
深圳通 |
询价 | ||
ST/意法 |
23+ |
DPAK |
3800 |
大批量供应优势库存热卖 |
询价 |