MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@V

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MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@V

文件：303.96 Kbytes 页数：9 Pages

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MOSFETs Silicon P-Channel MOS (U-MOS??

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MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@V

文件：303.96 Kbytes 页数：9 Pages

TOSHIBA

东芝

MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Power Management Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@V

文件：303.96 Kbytes 页数：9 Pages

TOSHIBA

东芝