丝印：H；Package：CST3C；MOSFETs Silicon P-Channel MOS

Applications • Power Management Switches Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 1110 mΩ (typ.) (@VGS = -1.2 V) RDS(ON) = 780 mΩ (typ.) (@VGS = -1.5 V) RDS(ON) = 650 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 510 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 400 mΩ (typ.)

文件：385.67 Kbytes 页数：8 Pages

TOSHIBA

东芝

丝印：H；Package：CST3C；MOSFETs Silicon P-Channel MOS

文件：390.48 Kbytes 页数：8 Pages

TOSHIBA

东芝

MOSFETs Silicon P-Channel MOS

Applications • Power Management Switches Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 1110 mΩ (typ.) (@VGS = -1.2 V) RDS(ON) = 780 mΩ (typ.) (@VGS = -1.5 V) RDS(ON) = 650 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 510 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 400 mΩ (typ.)

文件：385.67 Kbytes 页数：8 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：P-ch\nGeneration：U-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID -0.7 A \nPower Dissipation PD 0.5 W \nDrain-Source voltage VDSS -20 V \nGate-Source voltage VGSS +/-10 V ;

Toshiba

东芝