MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Load Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 90

文件：287.27 Kbytes 页数：9 Pages

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MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Load Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 90

文件：287.27 Kbytes 页数：9 Pages

TOSHIBA

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MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications • Load Switches Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 90

文件：287.27 Kbytes 页数：9 Pages

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CST3

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SOT23-3

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